VISHAY SI6463BDQ-T1-E3

Manufacturer No:

SI6463BDQ-T1-E3

Manufacturer:

VISHAY

Package:

8-TSSOP (0.173, 4.40mm Width)

Description:

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 15m ? @ 7.4A, 4.5V 60nC @ 5V 20V 8-TSSOP (0.173, 4.40mm Width)

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SI6463BDQ-T1-E3 information

VISHAY SI6463BDQ-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI6463BDQ-T1-E3.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-TSSOP (0.173, 4.40mm Width)

Number of Pins
8

Packaging
Cut Tape (CT)

Series
TrenchFET®

Published
2008

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
8

ECCN Code
EAR99

Resistance
15mOhm

Terminal Finish
Matte Tin (Sn)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Subcategory
Other Transistors

Max Power Dissipation
1.05W

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Number of Elements
1

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.05W

Turn On Delay Time
35 ns

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
15m ? @ 7.4A, 4.5V

Vgs(th) (Max) @ Id
800mV @ 250?A

Current - Continuous Drain (Id) @ 25°C
6.2A Ta

Gate Charge (Qg) (Max) @ Vgs
60nC @ 5V

Rise Time
40ns

Drain to Source Voltage (Vdss)
20V

Fall Time (Typ)
40 ns

Turn-Off Delay Time
190 ns

Continuous Drain Current (ID)
-7.4A

Gate to Source Voltage (Vgs)
8V

Drain Current-Max (Abs) (ID)
6.2A

Drain to Source Breakdown Voltage
-20V

Height
1.0414mm

Length
4.4958mm

Width
3.0988mm

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for VISHAY SI6463BDQ-T1-E3.

SI6463BDQ-T1-E3 Overview

This device conducts a continuous drain current (ID) of -7.4A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 6.2A.When the device is turned off, a turn-off delay time of 190 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.

SI6463BDQ-T1-E3 Features

a continuous drain current (ID) of -7.4A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 190 ns
a 20V drain to source voltage (Vdss)

SI6463BDQ-T1-E3 Applications

There are a lot of Vishay Siliconix
SI6463BDQ-T1-E3 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

User Guide

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