VISHAY SI7322DN-T1-E3
Manufacturer No:
SI7322DN-T1-E3
Manufacturer:
Package:
SMALL OUTLINE, S-XDSO-C5
Description:
Description: Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R
Quantity:
Delivery:




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SI7322DN-T1-E3 information
VISHAY SI7322DN-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI7322DN-T1-E3.
- Type
- Parameter
- Pbfree Code
- Yes
- Part Life Cycle Code
- End Of Life
- Ihs Manufacturer
- VISHAY SILICONIX
- Package Description
- SMALL OUTLINE, S-XDSO-C5
- Pin Count
- 8
- Reach Compliance Code
- unknown
- ECCN Code
- EAR99
- HTS Code
- 8541.29.00.95
- Samacsys Manufacturer
- Vishay
- Avalanche Energy Rating (Eas)
- 18 mJ
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 100 V
- Drain Current-Max (ID)
- 18 A
- Drain-source On Resistance-Max
- 0.058 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- Feedback Cap-Max (Crss)
- 25 pF
- JESD-30 Code
- S-PDSO-N8
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 8
- Operating Mode
- ENHANCEMENT MODE
- Operating Temperature-Max
- 150 °C
- Package Body Material
- PLASTIC/EPOXY
- Package Shape
- SQUARE
- Package Style
- SMALL OUTLINE
- Peak Reflow Temperature (Cel)
- 260
- Polarity/Channel Type
- N-CHANNEL
- Power Dissipation Ambient-Max
- 3.8 W
- Power Dissipation-Max (Abs)
- 52 W
- Pulsed Drain Current-Max (IDM)
- 20 A
- Qualification Status
- Not Qualified
- Surface Mount
- YES
- Terminal Finish
- Matte Tin (Sn)
- Terminal Form
- NO LEAD
- Terminal Position
- DUAL
- Time@Peak Reflow Temperature-Max (s)
- 30
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Turn-off Time-Max (toff)
- 35 ns
- Turn-on Time-Max (ton)
- 30 ns
Download datasheets and manufacturer documentation for VISHAY SI7322DN-T1-E3.
Datasheets:
SI7322DN-T1-E3 Overview
A device's maximum input capacitance is 750pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.
SI7322DN-T1-E3 Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 20A.
SI7322DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7322DN-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
User Guide
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MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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