VISHAY SIS890DN-T1-GE3

Manufacturer No:

SIS890DN-T1-GE3

Manufacturer:

VISHAY

Package:

PowerPAK® 1212-8

Description:

MOSFET (Metal Oxide) N-Channel Digi-Reel® 23.5m ? @ 10A, 10V ±20V 802pF @ 50V 29nC @ 10V PowerPAK® 1212-8

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SIS890DN-T1-GE3 information

VISHAY SIS890DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SIS890DN-T1-GE3.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
PowerPAK® 1212-8

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Digi-Reel®

Series
TrenchFET®

Published
2013

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

ECCN Code
EAR99

Resistance
23.5MOhm

Subcategory
FET General Purpose Powers

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
C BEND

JESD-30 Code
S-PDSO-C5

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Number of Channels
1

Power Dissipation-Max
3.7W Ta 52W Tc

Power Dissipation
3.7W

Case Connection
DRAIN

Turn On Delay Time
9 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
23.5m ? @ 10A, 10V

Vgs(th) (Max) @ Id
3V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
802pF @ 50V

Current - Continuous Drain (Id) @ 25°C
30A Tc

Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V

Rise Time
10ns

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
8 ns

Turn-Off Delay Time
16 ns

Continuous Drain Current (ID)
8.8A

Threshold Voltage
1.5V

Gate to Source Voltage (Vgs)
20V

Drain Current-Max (Abs) (ID)
30A

Drain to Source Breakdown Voltage
100V

Pulsed Drain Current-Max (IDM)
60A

Avalanche Energy Rating (Eas)
5 mJ

Max Junction Temperature (Tj)
150°C

Download datasheets and manufacturer documentation for VISHAY SIS890DN-T1-GE3.

SIS890DN-T1-GE3 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 5 mJ.A device's maximum input capacitance is 802pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.Its drain current is 30A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.5V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SIS890DN-T1-GE3 Features

the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 8.8A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 60A.
a threshold voltage of 1.5V

SIS890DN-T1-GE3 Applications

There are a lot of Vishay Siliconix
SIS890DN-T1-GE3 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

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