ST STL51N3LLH5
ST STL51N3LLH5

ST STL51N3LLH5

Manufacturer No:

STL51N3LLH5

Manufacturer:

ST

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14.5m ? @ 6.3A, 10V ±22V 724pF @ 25V 5nC @ 4.5V 8-PowerVDFN

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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STL51N3LLH5 information

ST STL51N3LLH5 technical specifications, attributes, parameters and parts with similar specifications to ST STL51N3LLH5.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • 8-PowerVDFN
  • Number of Pins
  • 8
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • STripFET? V
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • ECCN Code
  • EAR99
  • Resistance
  • 14.5MOhm
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Base Part Number
  • STL51
  • Configuration
  • Single
  • Power Dissipation-Max
  • 62.5W Tc
  • Power Dissipation
  • 62.5W
  • Turn On Delay Time
  • 4 ns
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 14.5m ? @ 6.3A, 10V
  • Vgs(th) (Max) @ Id
  • 2.5V @ 250?A
  • Input Capacitance (Ciss) (Max) @ Vds
  • 724pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 51A Tc
  • Gate Charge (Qg) (Max) @ Vgs
  • 5nC @ 4.5V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 4.5V 10V
  • Vgs (Max)
  • ±22V
  • Fall Time (Typ)
  • 3.5 ns
  • Turn-Off Delay Time
  • 2.1 ns
  • Continuous Drain Current (ID)
  • 51A
  • Gate to Source Voltage (Vgs)
  • 22V
  • Drain to Source Breakdown Voltage
  • 30V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ST STL51N3LLH5.

Datasheets:

STL51N3LLH5 Overview


The maximum input capacitance of this device is 724pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 51A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 2.1 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

STL51N3LLH5 Features


a continuous drain current (ID) of 51A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 2.1 ns


STL51N3LLH5 Applications


There are a lot of STMicroelectronics
STL51N3LLH5 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

User Guide

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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