

VISHAY TP0610K-T1-E3
Manufacturer No:
TP0610K-T1-E3
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
P-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 23pF @ 25V 1.7nC @ 15V 60V TO-236-3, SC-59, SOT-23-3
Quantity:
Delivery:




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In Stock :Available
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TP0610K-T1-E3 information
VISHAY TP0610K-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY TP0610K-T1-E3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 1.437803g
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 185mA Ta
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 350mW Ta
- Turn Off Delay Time
- 35 ns
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 10Ohm
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- ESD PROTECTION, LOW THRESHOLD
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 20
- Pin Count
- 3
- Number of Channels
- 1
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 350mW
- Turn On Delay Time
- 20 ns
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 6 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds
- 23pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 1.7nC @ 15V
- Drain to Source Voltage (Vdss)
- 60V
- Vgs (Max)
- ±20V
- Continuous Drain Current (ID)
- -185mA
- Threshold Voltage
- -3V
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Breakdown Voltage
- -60V
- Max Junction Temperature (Tj)
- 150°C
- Nominal Vgs
- -3 V
- Height
- 1.12mm
Download datasheets and manufacturer documentation for VISHAY TP0610K-T1-E3.
Datasheets:
RohsStatement:
TP0610K-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 23pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -185mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -60V, and this device has a drainage-to-source breakdown voltage of -60VV.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -3V, which means that it will not activate any of its functions when its threshold voltage reaches -3V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).
TP0610K-T1-E3 Features
a continuous drain current (ID) of -185mA
a drain-to-source breakdown voltage of -60V voltage
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
TP0610K-T1-E3 Applications
There are a lot of Vishay Siliconix
TP0610K-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
User Guide
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