TOSHIBA TTA1943(Q)
Manufacturer No:
TTA1943(Q)
Manufacturer:
Package:
TO-3PL
Description:
PNP 150°C TJ 5?A ICBO 1 Elements TO-3PL Tube Through Hole
Quantity:
Delivery:




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In Stock :Available
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TTA1943(Q) information
TOSHIBA TTA1943(Q) technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA TTA1943(Q).
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-3PL
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2009
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Power Dissipation
- 150W
- Frequency
- 30MHz
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 150W
- Gain Bandwidth Product
- 30MHz
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 230V
- Max Collector Current
- 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 1A 5V
- Current - Collector Cutoff (Max)
- 5?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 800mA, 8A
- Collector Emitter Breakdown Voltage
- 230V
- Collector Emitter Saturation Voltage
- -3V
- Emitter Base Voltage (VEBO)
- -5V
- hFE Min
- 80
- Height
- 26mm
- Length
- 20.5mm
- Width
- 5.2mm
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for TOSHIBA TTA1943(Q).
TTA1943(Q) Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
TTA1943(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
TTA1943(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TTA1943(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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